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QUANTUM AND OPTICAL PROPERTIES OF A GaN NANOCOLUMN QDISK LED DIODE |
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ARTICLES
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In this application, a full 3D model of an AlGaN nanocolumn heterostructure with a GaN quantum disk has been designed and used to perform 3D quantum calculations and obtain eigenvalues and eigenfunctions of confined states in the quantum disk (QD).
We first perform a strain simulation, to get deformation potentials and piezopolarization, than we apply drift-diffusion model with an increasing bias to the contacts, until the nanocolumn diode is brought in conduction regime. Then quantum efa calculations are performed to get the electron and hole states in the QD. Then, from these states in conduction and valence band, the optical emission spectrum is calculated. Finally, the quantum density for electrons and holes in the QD is calculated and compared to classical densities.
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3D SIMULATIONS OF A FinFET DEVICE |
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ARTICLES
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In this application, we have applied tiberCAD to 3D calculations of electrical characteristics of a Si-based 3-gate FinFET device.
For the last years, three-dimensional Multi-gate FET devices (double, triple or quadruple-gate) have been evolving from the silicon-on-insulator (SOI) classical, planar single gate MOSFET, in order to satisfy increasing need for higher current drive and better short channel behaviour.
The first fully depleted SOI MOSFET (early 1980's) showed superior transconductance, current drive and subthreshold swing. Its development led to the double-gate SOI MOSFET, which provided good short-channel characteristics due to the better gate control on the channel. A natural evolution of the latter was the vertical-channel double-gate FinFET. Triple-gate and gate-all-around implementations of the FinFET structure followed shortly. The phenomenon of volume inversion, leading to large transconductance, has encouraged the development of a series of these structures, ranging from quantum-wire MOSFET to circular section surrounding-gate devices with a pillar-like silicon island and vertical channel.
We consider here a three-gate FinFET structure with a 20 nm thick and 40 nm high Silicon fin. The channel length is 50 nm and the gate oxide thickness is 2 nm; we will see in the following the effects of the scaling of the device.
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